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| FS7VS-12A High-Speed Switching Use Nch Power MOS FET REJ03G0271-0100 Under development Rev.1.00 Aug.20.2004 Features * * * * Drive voltage : 10 V VDSS : 600 V rDS(ON) (max) : 1.3 ID : 7 A Outline LDPAK(S)-1 4 2, 4 1 1 2 3 1. 2. 3. 4. Gate Drain Source Drain 3 Applications SMPS, lamp ballast, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA PD Tch Tstg -- Ratings 600 30 7 21 7 100 - 55 to +150 - 55 to +150 1.2 Unit V V A A A W C C g Conditions VGS = 0 V VDS = 0 V L = 200 H Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS7VS-12A Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min. 600 30 -- -- 2.5 -- -- 4.2 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 1.0 3.0 7.0 1100 100 25 20 25 150 35 1.5 -- Max. -- -- 10 1 3.5 1.3 3.9 -- -- -- -- -- -- -- -- 2.0 1.25 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VGS = 25 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 25 V, VGS = 10 V, f = 1MHz VDD = 200 V, ID = 3 A, VGS = 10 V, RGEN = RGS = 50 IS = 3 A, VGS = 0 V Channel to case Rev.1.00, Aug.20.2004, page 2 of 6 FS7VS-12A Performance Curves Drain Power Dissipation Derating Curve 120 Maximum Safe Operating Area 10 7 5 3 2 10 7 5 3 2 2 Drain Power Dissipation PD (W) 100 Drain Current ID (A) tw =10s 80 60 40 20 0 0 1 100s 1ms 100 7 5 3 2 Tc = 25C 10 -1 Single Pulse DC 50 100 150 200 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Case Temperature Tc (C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 20 Tc = 25C Pulse Test Output Characteristics (Typical) 10 Tc = 25C Pulse Test Drain Current ID (A) Drain Current ID (A) 16 12 VGS = 20V,10V,8V 6V VGS = 20V,10V, 8V,6V 8 5V 6 PD = 100W 5V 8 4 0 0 PD = 100W 4 2 4V 10 20 30 40 50 0 0 4 8 12 16 20 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) 40 Tc = 25C Pulse Test Drain-Source On-State Resistance rDS(ON) () Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 2.0 32 24 16 10A ID = 14A 1.6 1.2 0.8 0.4 VGS = 10V 20V 8 0 0 7A 3A Tc = 25C Pulse Test 4 8 12 16 20 0 -1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS7VS-12A Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 10 7 5 3 2 2 Transfer Characteristics (Typical) 20 16 12 8 4 0 0 Tc = 25C VDS = 10V Pulse Test Drain Current ID (A) Tc = 25C 101 7 5 3 2 10 7 5 3 2 10 0 75C 125C -1 VDS = 10V Pulse Test -1 4 8 12 16 20 10 23 5 7 10 0 23 5 7 10 1 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 3 2 103 7 5 3 2 10 7 5 Tch = 25C 3 2 f = 1MHz 10 1 2 Drain Current ID (A) Switching Characteristics (Typical) 5 3 2 102 7 5 3 2 10 7 5 -1 10 1 Tch = 25C, VDD = 200V VGS = 10V, RGEN = RGS = 50 td(off) Capacitance (pF) Ciss Switching Time (ns) tf td(on) tr Coss VGS = 0V Crss 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 23 5 7 10 0 23 5 7 10 1 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 20 20 Tch = 25C ID = 7A Source-Drain Diode Forward Characteristics (Typical) Gate-Source Voltage VGS (V) Source Current IS (A) 16 12 8 4 0 0 VDS = 100V 200V 400V 16 Tc = 125C 12 75C 8 25C 4 VGS = 0V Pulse Test 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS7VS-12A On-State Resistance vs. Channel Temperature (Typical) 10 7 VGS = 10V ID = 3A 5 Pulse Test 3 2 100 7 5 3 2 10 -1 1 Drain-Source On-State Resistance rDS(ON) (25C) Drain-Source On-State Resistance rDS(ON) (tC) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 -50 0 50 100 150 -50 0 50 100 150 Channel Temperature Tch (C) Channel Temperature Tch (C) Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C) Transient Thermal Impedance Zth(ch-c) (C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 VGS = 0V ID = 1mA Transient Thermal Impedance Characteristics 10 7 5 3 2 D = 1.0 100 0.5 7 5 0.2 3 2 10 -1 1 1.2 1.0 0.8 0.6 0.4 7 5 3 2 0.1 0.05 0.02 Single Pulse -50 0 50 100 150 10-2 -4 -3 -2 -1 0 1 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 7 10 Channel Temperature Tch (C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vout Monitor Switching Waveform 90% RGEN Vin Vout 10% 10% 10% RGS VDD 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS7VS-12A Package Dimensions As of January, 2003 Unit: mm 4.44 0.2 10.2 0.3 (1.4) 8.6 0.3 + 0.3 - 0.5 10.0 (1.5) (1.5) 2.49 0.2 0.2 0.1 + 0.1 - 7.8 7.0 2.2 1.37 0.2 0.3 3.0 + 0.5 - 1.3 0.2 2.54 0.5 0.2 0.86 + 0.1 - 0.4 0.1 2.54 0.5 Package Code JEDEC JEITA Mass (reference value) LDPAK (S)-(1) -- -- 1.30 g Order Code Lead form Standard packing Quantity Standard order code Standard order code example FS7VS-12A-T11 Surface-mounted type Taping 1000 Type name - T +Direction (1 or 2) +1 Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 1.7 1.3 0.15 7.8 6.6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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